Results for: BSB028N06NN3 G in FETs - Single
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FETs - Single

The field-effect transistor (FET) is a transistor that uses an electric field to control the shape and hence the conductivity of a channel of one type of charge carrier in a semiconductor material. FETs are unipolar transistors as they involve single-carrier-type operation. The concept of the FET predates the bipolar junction transistor (BJT), though it was not physically implemented until after BJTs due to the limitations of semiconductor materials and the relative ease of manufacturing BJTs compared to FETs at the time.

FETs - Single

Part No.	DS	Manufacturer	D/C	Qty	Region	Action
BSB028N06NN3G		Infineon	201742+	3407	China	Request A Quote
BSB028N06NN3G		Infineon	-	8302	Hong Kong	Request A Quote
BSB028N06NN3G		Infineon	201742+	3407	Japan	Request A Quote
BSB028N06NN3G		Infineon	201742+	3407	Hong Kong	Request A Quote
BSB028N06NN3G		Infineon	-	4800	China	Request A Quote
BSB028N06NN3G		Infineon	2017+	10000	Hong Kong	Request A Quote
BSB028N06NN3G		Infineon	-	5150	China	Request A Quote
BSB028N06NN3G		Infineon	-	1000	Hong Kong	Request A Quote

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